Junction Transistors by John. J. Sparkes and P. Hammond (Auth.)

By John. J. Sparkes and P. Hammond (Auth.)

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If now we take the two particular limits A and B marked in Fig. 3, in which A is far out in the n region and B is far out in the/? 6) where Nd is the donor density, pn and nn are the hole and electron densities in the n region, and the subscript zero denotes THE pn JUNCTION. STEADY-STATE PROPERTIES 43 equilibrium conditions. 5) requires that the semi­ conductor is significantly doped, that is Nd > nt. Similarly, equilibrium densities will exist at B so that if Na is the acceptor density in the/?

The calculation is carried out in Appendix E—to a consideration of which we will return shortly. For the time being we should notice that in this description the holes and electrons are being regarded as quite separate "gases" which, however, carry charges. If they were uncharged "gases" the diffusion would continue until each filled both regions, as with two rooms separated by a door. If one room initially contained oxygen and the other nitrogen at the same pressure, opening the door would lead, after an initial "transient" period, to a complete intermixing of the gases.

Must result in a net transfer of positive charge from the/? region to the n region with the consequence that the n region acquires a positive potential with respect to the p region, and therefore a field opposing both types of carrier diffusion will be set up. THE pn JUNCTION. STEADY-STATE PROPERTIES 37 The diffusion processes therefore continue until the field thereby set up is sufficient to counterbalance the tendency to diffuse. A new equilibrium is soon reached, in which no further currents of either holes or electrons flow, and in which the hole, electron and field distributions through the junction are approximately as shown in Fig.

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