Organic electronics. : II more materials and applications by Hagen Klauk

By Hagen Klauk

"Like its predecessor this booklet is dedicated to the fabrics, production and purposes facets of natural thin-film transistors. once more authored through the main popular specialists from this attention-grabbing and fast-moving zone of analysis, it bargains a joint point of view either vast and in-depth at the most recent advancements within the parts of fabrics chemistry, shipping physics, fabrics characterization, manufacturing Read more...

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1 Introduction In polymer adhesive bonding, an intermediate polymer layer is used to create a bond between two surfaces to hold them together. In most commonly used polymer adhesive wafer bonding processes, a well-defined and defect-free polymer layer is applied to one or both of the wafer surfaces to be bonded. After joining the wafer surfaces, pressure is applied to force the wafer surfaces into intimate contact. The polymer is then converted from a liquid or viscoelastic state into a solid state, typically done by heating the polymer [1, 2].

1 Polymer Adhesion Mechanisms In polymer adhesive wafer bonding, a polymer adhesive is placed between the pair of wafers to be bonded, bearing the forces involved to hold the wafer surfaces together. Like most bonding techniques, polymer adhesive wafer bonding is based on the fact that atoms and molecules adhere to each other when they are brought into sufficiently close contact. The cohesion of atoms or molecules within polymers and the adhesion of atoms or molecules between polymers and wafer materials are ensured by one or more different basic intermolecular bond and interaction types: (i) covalent bonds, (ii) ionic bonds, (iii) dipole–dipole interactions (including hydrogen bonds), and (iv) van der Waals interactions.

The bonded pairs were then annealed at 200 and 225 °C for 10 h (increasing the temperature above 225 °C will result in a high stress which leads to debonding and GaAs shattering). 5 presents the surface energy for three identically processed GaAs/Si bonded pairs. After annealing at 200 °C, the surface energy reached values of about 2 J m−2. Annealing at 225 °C or increasing the annealing time did not result in any significant increase of the surface energy. Due to the high thermal mismatch of the two materials, the behavior of the bonded pairs during annealing was investigated by in situ measurement of the bow.

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